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Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
*
Package Dimensions
unit : mm 2038A
[2SB1123 / 2SD1623]
4.5 1.6 1.5
Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Features
* * * * *
Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC's further miniaturization.
0.5 3 1.5 2 3.0 1
1.0
0.4
2.5 4.25max
0.4
Specifications
( ) : 2SB1123 Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
0.75
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Ratings (--)60 (--)50 (-)6 (-)2 (-)4 0.5 Unit V V V A A W W C C
Mounted on a ceramic board (250mm2!0.8mm)
1.3 150 --55 to +150
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE(1) Conditions VCB=(--)50V, IE=0 VEB=(-)4V, IC=0 VCE=(--)2V, IC=(--)100mA 100* 40 Ratings min typ max (-)100 (-)100 560* Unit nA nA
hFE(2) VCE=(--)2V, IC=(--)1.5A * : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Marking 2SB1123 : BF 2SD1623 : DF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5
2SB1123 / 2SD1623
Continued from preceding page.
Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10A, IE=0 IC=(--)1mA, RBE= IE=(-)10A, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. (-)60 (-)50 (--)6 (60)60 (450)550 (30)30 Ratings min typ 150 (22)12 (--0.3)0.15 (--)0.9 (-0.7)0.4 (--)1.2 max Unit MHz pF V V V V V ns ns ns
Switching Time Test Circuit
PW=20s D.C.1% INPUT IB1 RB IB2 OUTPUT
VR 50
RL=50
+ 100F --5V
+ 470F 25V
10IB1= --10IB2=IC=500mA (For PNP, the polarity is reversed)
--2.4
IC -- VCE
2SB1123 Pulse
--
2.4
IC -- VCE
50m A
40m A
2SD1623 Pulse
--2.0
Collector Current, IC -- A
--
--1.6
Collector Current, IC -- A
m 50
A
2.0
A 20m
25mA
1.6
--10mA
--1.2
15mA
8mA
--8mA --6mA
1.2
--0.8
--4mA
0.8
4mA
--0.4
--2mA
IB=0
0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4
0.4
2mA
IB=0
0 0.4 0.8 1.2 1.6 2.0 2.4 ITR08892
0
0 ITR08891 1200
Collector-to-Emitter Voltage, VCE -- V
--1200
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
--1000
--7mA --6mA
2SB1123 Pulse
Collector Current, IC -- mA
1000
7mA 6mA
2SD1623 Pulse
5mA
Collector Current, IC -- mA
--5mA
--800
--4mA
--3mA --2mA
800
4mA
--600
600
3mA
--400
400
2mA
--1mA
--200
200
1mA
IB=0
0 2 4 6 8 10 12 ITR08894
0 0 --2 --4 --6 --8
IB=0
--10 --12 ITR08893
0
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No.1727-2/5
2SB1123 / 2SD1623
--1200
IC -- VBE
2SB1123 VCE= --2V
1200
IC -- VBE
2SD1623 VCE=2V
--1000
1000
Collector Current, IC -- mA
--800
Collector Current, IC -- mA
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
800
--600
600
--400
400
--200
200
0
0 0 0.2 0.4 0.6 0.8 1.0 1.2 ITR08896
Base-to-Emitter Voltage, VBE -- V
1000 7 5
ITR08895 1000 7 5
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
hFE -- IC
2SB1123 VCE= --2V DC Current Gain, hFE
2SD1623 VCE=2V
DC Current Gain, hFE
3 2
3 2
100 7 5 3 2 10 --10
100 7 5 3 2 10
2
3
5
7 --100
2
3
5
7 --1000
2
3
5
10
2
3
5
7 100
2
3
5
7 1000
2
3
5
Collector Current, IC -- mA
1000
ITR08897 1000
f T -- IC
Collector Current, IC -- mA
ITR08898
f T -- IC
Gain-Bandwidth Product, f T -- MHz
5 3 2
Gain-Bandwidth Product, f T -- MHz
7
2SB1123 VCB=10V
7 5 3 2
2SD1623 VCB=10V
100 7 5 3 2 10 --10
100 7 5 3 2 10
2
3
5
7 --100
2
3
5
7 --1000
2
3
10
2
3
5
7 100
2
3
5
7 1000
2
3
Collector Current, IC -- mA
2
ITR08899 100
Cob -- VCB
Collector Current, IC -- mA
ITR08900
Cob -- VCB
2SB1123 f=1MHz Output Capacitance, Cob -- pF
100 7 5
7
2SD1623 f=1MHz
Output Capacitance, Cob -- pF
2 3 5 7 2 3 5 7 --100 ITR08901
5
3
3 2
2
10 7 5 1.0
10 7 5 --1.0 --10
2
3
5
7
10
2
3
5
Collector-to-Base Voltage, VCB -- V
Collector-to-Base Voltage, VCB -- V
7 100 ITR08902
No.1727-3/5
2SB1123 / 2SD1623
--100 5
VCE(sat) -- IC
2SB1123 IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
100 5 2 10 5 2 1.0 5 2 0.1 5 2 0.01
VCE(sat) -- IC
2SD1623 IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
2 --10 5 2 --1.0 5 2 --0.1 5 2
--0.01 --10
2
3
5
7 --100
2
3
5
7 --1000
2
3
10
2
3
5
7
100
2
3
5
7 1000
2
3
Collector Current, IC -- mA
10 5 3
ITR08903 0.8
ASO
Collector Current, IC -- mA
ITR08904
PC -- Ta
2SB1123 / 2SD1623
2SB1123 / 2SD1623
ICP=4A IC=2A
Collector Dissipation, PC -- W
1m
Collector Current, IC -- A
s
2 1.0 5 3 2 0.1 5 3 2 5
0.6 0.5 0.4
s 0m 10
10 ms
DC
op
era
tio
n
No
0.2
he
at
sin
k
Ta=25C Single pulse For PNP, minus sign is omitted Mounted on a ceramic board(250mm2!0.8mm)
7 1.0 2 3 5 7 10 2 3 5
0 100 ITR08906 7 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
1.6 1.4
Ambient Temperature, Ta -- C
IT04221
PC -- Tc
2SB1123 / 2SD1623
Collector Dissipation, PC -- W
1.3 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20
M
ou
nte
do
na
ce
ram
ic
bo
ard
(2
50
mm
2
!0
.8m
m)
140 160
40
60
80
100
120
Case Temperature, Tc -- C
IT04222
No.1727-4/5
2SB1123 / 2SD1623
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of Nobember, 2001. Specifications and information herein are subject to change without notice.
PS No.1727-5/5

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